Electronics Vs Spintronics
One of the most
inherent advantages of spintronics over electronics is that magnets tend to
stay magnetised, which is sparking in the industry an interest for replacing
computers’ semiconductor-based components with magnetic ones, starting with the
random access memory (RAM), Let me tell you an example: You are in the mid of
documenting a project presentation that you need to present tomorrow morning
and you face an electric power failure. Your UPS was not recharged and, the
worst part of all, you didn’t save your presentation. I am sure that a
condition like this is enough, to leave you back, pulling your hair, for now
you have to do the same task right from the scratch.
Spin-Valve Transistor
A new type of magnetic
field sensor is the spin-valve transistor (Fig. 5). This transistor is based on
the magneto resistance found in. multilayers (for example, in Co/Cu/Co).
Usually, the resistance of a multiplayer is measured with the current-in-plane
(CIP). The CIP configuration suffers from several drawbacks; for example, the
CIP magneto resistance is diminished by shunting and diffusive surface
scattering.
Abstract
Control over spins in
the solid state forms the basis for nascent spintronics and quantum information
technologies. There is a growing interest in the use of electronic and nuclear
spins in semiconductor nanostructures as a medium for the manipulation and
storage of both classical and quantum information.
Spin-based electronics
offer remarkable opportunities for exploiting the robustness of quantum spin
states by combining standard electronics with spin-dependent effects that arise
from the interactions between Sections, nuclei, and magnetic fields. Here we
provide an overview of recent developments in coherent electronic spin dynamics
in semiconductors ant quantum structures, including a discussion of temporally-
and spatially-resolved magneto-optical measurements that reveal an interesting
interplay between electronic and nuclear spins. In particular, we present an
electrical scheme for local spin manipulation based on g¬tensor modulation
resonance (g-TMR), functionally equivalent to electron spin resonance (ESR) but
without the use of time dependent magnetic fields.
Magnetic
sensitivity
The number of electrons
that reach the collector increases exponentially with the mean free path of the
electrons in the base. The mean free path varies with the applied magnetic
field; hence the collector current becomes strongly magnetic field-dependent.
Spin Relaxation
Non-equilibrium spin
accumulates in non-magnetic region due to process of spin injection. It comes
to equilibrium by the phenomenon called spin relaxation . The rate of
accumulation of non-equilibrium spin depends on the spin relaxation. Electrons
can remember their spin state for finite period of time before relaxing. That
finite time period is called ‘Spin lifetime’. Longer lifetime is more desirable
for data communication application while shorter for fast switching.
Conclusion
Spintronics is still in
its infancy and it’s difficult to predict how it will evolve. New physics is
being discovered and new materials are being developed, such as magnetic
semiconductors and exotic oxides that manifest an even more extreme effect
called colossal magneto resistance.
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